Enhancing electrical performance and stability of nanometer-thin ITO transistors via thermally oxidized alumina passivation layer

Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6....

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

High performance single-walled carbon nanotube field effect transistors SWCNT-FETs fabricated with thin atomic layer deposited ALD Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5 m gate-length SWCNT-FETs with 15 nm thick Al2O3 insulator shows a gate leakage current below 10−11 A at −2.5 V Vg +7 V, a subthreshold swing of S 105 mV/decade, and a maximum on current of −12 A...

a-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation

Charlene Chen (SID Student Member) Katsumi Abe Hideya Kumomi Jerzy Kanicki (SID Member) Abstract — Inverted-staggered amorphous In–Ga–Zn–O (a-InGaZnO) thin-film transistors (TFTs) were fabricated and characterized on glass substrates. The a-InGaZnO TFTs exhibit adequate field-effect mobilities, sharp subthreshold slopes, and very low off-currents. The current temperature stress (CTS) on the a-I...

Electrical Stability of Power Efficient Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistors

In this paper, we study the electrical properties and current-temperature stress (CTS) induced electrical instability of half Corbino and fork-shaped hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) fabricated on the same substrate. The influence on overall electrical properties of the threshold voltage shift of half Corbino a-Si:H TFT is discussed in comparison to fork-shap...